University
of Toronto
Physics Department
Special Quantum Optics and Condensed Matter
WEDNESDAY SEMINAR
University
of Toronto
| Speaker : | PROF. ALEXANDER N. CARTWRIGHT
Department of Electrical Engineering SUNY Buffalo |
| Topic : | SPECTROSCOPY OF POLARIZATION EFFECTS IN III-N
HETEROSTRUCTURES |
| Time : | Wednesday, September 13, 2000 at 11:00 a.m. |
| Place : | Room 1115, Burton Tower 60 St. George Street / 255 Huron Street |
Abstract
Time-resolved and CW photoluminescence measurements are used to investigate
carrier dynamics and excitonic emission from InGaN and AlInGaN quantum
wells in III-N heterostructures. GaN/InGaN structures contained multiple
quantum wells (MQW), of high concentrations of Indium (20% and 30%), embedded
within the intrinsic region of a p-i-n. These results are compared to a
study of single quantum wells with AlGaN and AlInGaN barriers in an undoped
structure. Temperature and excitation dependent CW photoluminescence
and used to quantify the shift in emission energies of these quaternary
samples. The behavior of nearly latticed matched quantum wells will be
contrasted to the behavior of lattice mismatched InGaN quantum wells with
emphasis on implications for device performance. The recombination dynamics
and carrier transport dynamics in all of the InGaN quantum wells will be
discussed
Local Host: Prof.
Henry van Driel
(416-978-4200)