Advanced Undergraduate Laboratory

Department of Physics

University of Toronto

HALL: Semiconductor Resistance, Band Gap and Hall Effect

This experiment studies the properties of doped and undoped semiconductors. Among the measurable quantities are electron and hole mobilities and carrier densities, Hall coefficients, the temperature dependencies of these properties, and the energy gap between the valence and conduction bands.

Write-Up in PDF Format or Microsoft Word Format.

(The experiment is currently located in MP239; last write-up revision: January 2018.)

Please note that this write-up has not yet been fully updated (as of January 2016) to describe our new apparatus that uses the van der Pauw method.

In the interim, the NIST Physical Measurement Laboratory provides a useful description of van der Pauw Resistivity and Hall Measurements.

The Ioffe Physico-Technical Institute provides possibly useful information on Germanium.

Photo of student working on Hall experiment

Richard Peter, 3rd year undergraduate, working on previous version of the Hall Effect experiment.

Last updated on 5 January 2018